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Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V N-Channel 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V P-Channel - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) 600 500 350 - 400 - 300 - 150
FEATURES
* Halogen-free Option Available * TrenchFET(R) Power MOSFETs * * * * 2000 V ESD Protection Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 0.7 P-Channel, 1.2 * Low Threshold: 0.8 V (Typ.) * Fast Switching Speed: 14 ns * 1.8 V Operation
RoHS
COMPLIANT
BENEFITS
SOT-563 SC-89
S1 1 6 D1
* * * * *
Marking Code: A
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
G1
2
5
G2 S2
APPLICATIONS * * * * Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
D2
3
4
Top V iew
Ordering Information: SI1016X-T1-E3 (Lead (Pb)-free) Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 C TA = 85 C TA = 25 C TA = 85 C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 515 370 650 380 250 130 2000 - 450 280 145 - 55 to 150 485 350 5s Steady State 20 6 - 390 - 280 - 650 - 380 250 130 mW C V - 370 - 265 mA 5s P-Channel Steady State - 20 V Unit
Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature.
Document Number: 71168 S-80427-Rev. D, 03-Mar-08
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Si1016X
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Gate Threshold Voltage Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 4.5 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 C VDS = - 16 V, VGS = 0 V, TJ = 85 C On State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 600 mA VGS = - 4.5 V, ID = - 350 mA Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 500 mA VGS = - 2.5 V, ID = - 300 mA VGS = 1.8 V, ID = 350 mA VGS = - 1.8 V, ID = - 150 mA Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Qg Qgs Qgd tON N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Channel VDD = 10 V, RL = 47 ID 200 mA, VGEN = 4.5 V, RG = 10 P-Channel VDD = - 10 V, RL = 47 ID - 200 mA, VGEN = - 4.5 V, RG = 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1500 75 150 225 450 5 5 25 35 ns pC gfs VSD VDS = 10 V, ID = 400 mA VDS= - 10 V, ID = - 250 mA IS = 150 mA, VGS = 0 V IS = - 150 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 700 - 700 0.41 0.80 0.53 1.20 0.70 1.80 1.0 0.4 0.8 - 0.8 1.2 - 1.2 V S 0.70 1.2 0.85 1.6 1.25 2.7 mA 0.45 - 0.45 0.5 1.0 0.3 - 0.3 1 -1 1.0 2.0 100 - 100 5 -5 A nA V A Symbol Test Conditions Min. Typ. Max. Unit
Turn-Off Time
tOFF
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71168 S-80427-Rev. D, 03-Mar-08
Si1016X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
1.0
1200 TC = - 55 C 25 C 800 125 C 600
0.8
I D - Drain Current (A)
1000
VGS = 5 thru 1.8 V
I D - Drain Current (mA)
0.6
0.4
400
0.2 1V 0.0 0.0
200
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
VDS - Drain-to-Source Voltage (V)
0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V)
2.5
Output Characteristics
4.0
100
Transfer Characteristics
R DS(on) - On-Resistance ()
3.2
80
Ciss
VGS = 0 V f = 1 MHz
C - Capacitance (pF)
2.4
60
1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0 200 400 600 800 1000
40 Coss Crss 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V)
20
0.0 ID - Drain Current (mA)
On-Resistance vs. Drain Current
5 VDS = 10 V ID = 250 mA 4
R DS(on) - On-Resistance
Capacitance
1.60
VGS - Gate-to-Source Voltage (V)
1.40
VGS = 4.5 V ID = 350 mA
(Normalized)
3
1.20 VGS = 1.8 V ID = 150 mA 1.00
2
1
0.80
0 0.0
0.2
0.4
0.6
0.8
0.60 - 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71168 S-80427-Rev. D, 03-Mar-08
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Si1016X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
1000 TJ = 125 C
R DS(on) - On-Resistance () 4 ID = 350 mA 3 ID = 200 mA 2 5
I S - Source Current (mA)
100 TJ = 25 C
10
TJ = 50 C
1
1 0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.3
3.0
On-Resistance vs. Gate-to-Source Voltage
0.2
V GS(th) Variance (V)
2.5
ID = 0.25 mA 0.1
IGSS - ( A) 2.0
0.0
1.5
- 0.1
1.0 VGS = 4.5 V
- 0.2
0.5
- 0.3 - 50
- 25
0
25
50
75
100
125
0.0 - 50
- 25
0
25
50
75
100
125
TJ - T emperature (C)
TJ - T emperature (C)
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
IGSS vs. Temperature
7 6 5 4 3 2 1 0 - 50
- 25
0
25
50
75
100
125
TJ - T emperature (C)
BVGSS vs. Temperature
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Document Number: 71168 S-80427-Rev. D, 03-Mar-08
Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
1.0 VGS = 5 thru 3 V 0.8 2.5 V
800 1000 TJ = - 55 C 25 C
0.6 2V 0.4 1.8 V 0.2
I D - Drain Current (mA)
I D - Drain Current (A)
600
125 C
400
200
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
4.0 VGS = 1.8 V
Transfer Characteristics
120 VGS = 0 V f = 1 MHz 100
C - Capacitance (pF)
R DS(on) - On-Resistance ()
3.2
80
Ciss
2.4 VGS = 2.5 V 1.6 VGS = 4.5 V 0.8
60
40 Coss 20 Crss 0 4 8 12 16 20
0.0 0 200 400 600 800 1000 ID - Drain Current (mA)
0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5 VDS = 10 V ID = 250 mA 4
RDS(on) - On-Resistance () (Normalized) 1.4 1.6
Capacitance
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA
3
2
1.0
1
0.8
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.6 - 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71168 S-80427-Rev. D, 03-Mar-08
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Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
1000 TJ = 125 C
5
100 TJ = 25 C TJ = - 55 C 10
R DS(on) - On-Resistance ()
4
I S - Source Current (mA)
3 ID = 350 mA 2 ID = 200 mA 1
1 0.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
1
2
3
4
5
6
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.3 3.0
On-Resistance vs. Gate-to-Source Voltage
0.2
V GS(th) Variance (V)
2.5 ID = 0.25 mA
0.1
IGSS - (A)
2.0 VGS = 4.5 V
0.0
1.5
- 0.1
1.0
- 0.2
0.5
- 0.3 - 50
- 25
0 25 50 75 TJ - T emperature (C)
100
125
0.0 - 50
- 25
0 25 50 75 TJ - T emperature (C)
100
125
Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)
IGSS vs. Temperature
7 6 5 4 3 2 1 0 - 50
- 25
0
25
50
75
100
125
TJ - T emperature (C)
BVGSS vs. Temperature
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Document Number: 71168 S-80427-Rev. D, 03-Mar-08
Si1016X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = R thJA = 500 C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71168.
Document Number: 71168 S-80427-Rev. D, 03-Mar-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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